NDLI: Carrier-storage effect and extraction-enhanced lateral IGBT $(E^{2}LIGBT):$ A super-high speed and low on-state voltage LIGBT superior to LDMOSFET

Content Provider	IEEE Xplore Digital Library
Author	Takahashi, S. Akio, A. Youichi, Y. Satoshi, S. Norihito, N.
Copyright Year	2012
Description	Author affiliation: DENSO Co., Ltd, Kota-cho, Nukata-gun, Aichi 444-0193, Japan (Takahashi, S.; Youichi, Y.; Satoshi, S.; Norihito, N.) \|\| Nakagawa Consulting Office, Chigasaki, Kanagawa 253-0021, Japan (Akio, A.)
Abstract	We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors $(E^{2}LIGBTs),$ which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 $A/cm^{2}$ simultaneously with a high breakdown voltage of 738V. For the first time, $E^{2}LIGBTs$ have exceeded the counterpart lateral DMOS both in switching speed and in on-resistance. The superior performance is achieved by the novel anode structure consisting of a narrow $p^{+}-injector$ and a wide Schottky contact on a lightly doped p-layer over an n-buffer. The on-state voltage can be further reduced to 3.0V at 84 $A/cm^{2}$ by introducing Carrier Storage (CS) layer. The developed $E^{2}LIGBTs$ achieved the best trade-off between on-resistance and switching speed among all the lateral MOS power devices, so far reported.
Starting Page	393
Ending Page	396
File Size	2251635
Page Count	4
File Format	PDF
ISBN	9781457715945
ISSN	19460201
e-ISBN	9781457715976
e-ISBN	9781457715969
DOI	10.1109/ISPSD.2012.6229104
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky barriers Silicon Temperature measurement Anodes Inverters Current density
Content Type	Text
Resource Type	Article

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