NDLI: High-voltage thin layer SOI technology for negative power supply

Content Provider	IEEE Xplore Digital Library
Author	Ming Qiao Yitao He Hengjuan Wen Xin Zhou Lingli Jiang Huaping Jiang Xiaorong Luo Zhaoji Li Bo Zhang Zhengcai Chen Yuqiu Su Zhiqiang Xiao Cheng Wang
Copyright Year	2012
Description	Author affiliation: No.58 Research Institute, China Electronics Technology Group Corporation, Wuxi, Jiangsu, China (Zhengcai Chen; Yuqiu Su; Zhiqiang Xiao; Cheng Wang) \|\| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China (Ming Qiao; Yitao He; Hengjuan Wen; Xin Zhou; Lingli Jiang; Huaping Jiang; Xiaorong Luo; Zhaoji Li; Bo Zhang)
Abstract	A novel HV thin layer SOI technology based on 1.5-µm-thick silicon layer for negative HV power supply has been first proposed. HV field nLDMOS with thick gate oxide, HV pLDMOS with thin gate oxide and LV CMOS are compatible with shallow trench isolation. Gate and source field plates are adopted to improve the breakdown characteristics of HV field nLDMOS since it doesn't meet SOI RESURF criterion. N-field with shallow junction depth is introduced to eliminate channel discontinuity around the “beak” region at the source side of HV field nLDMOS and avoid punch-through breakdown induced by BG effect of HV field nLDMOS. The influences of key parameters on breakdown mechanism are discussed and optimal parameters are obtained to achieve well characteristics of HV field nLDMOS for negative HV power supply. A negative HV switching IC using the proposed thin layer SOI technology shows that both the rise and fall times of the output stages are less than 50 ns under the negative supply voltage of −100 V and the load capacitance of 5000 pF.
Starting Page	201
Ending Page	204
File Size	1277925
Page Count	4
File Format	PDF
ISBN	9781457715945
ISSN	19460201
e-ISBN	9781457715976
e-ISBN	9781457715969
DOI	10.1109/ISPSD.2012.6229058
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power supplies Logic gates Electric breakdown Electric fields Integrated circuits Switches Junctions negative HV switching IC thin layer SOI negative power supply field nLDMOS
Content Type	Text
Resource Type	Article

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