NDLI: A multi-region trap characterization method and its reliability application on STI-based high-voltage LDMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Yandong He Ganggang Zhang Xing Zhang
Copyright Year	2012
Description	Author affiliation: Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, China (Yandong He; Ganggang Zhang; Xing Zhang)
Abstract	The STI-based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. In this paper, a multi-region trap characterization direct current current-voltage (MR-DCIV) technique was proposed to characterize interface state generation in both channel and STI drift regions. The correlation between interface trap and MR-DCIV current has been verified by two-dimensional device simulation. Degradation of STI-based LDMOS transistors in various reliability stress modes is investigated experimentally by proposed technique. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our study reveals that OFF-state stress becomes the worst degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.
Starting Page	307
Ending Page	310
File Size	1074611
Page Count	4
File Format	PDF
ISBN	9781457715945
ISSN	19460201
e-ISBN	9781457715976
e-ISBN	9781457715969
DOI	10.1109/ISPSD.2012.6229084
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Interface states Degradation Logic gates Substrates Voltage measurement degradation High voltage LDMOS multi-region direct current IV technique interface state
Content Type	Text
Resource Type	Article

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