NDLI: High breakdown voltage AlGaN/GaN MOS-HEMTs-on-Si with atomic-layer-deposited Al gate insulator

Content Provider	IEEE Xplore Digital Library
Author	Young-Shil Kim Min-Woo Ha Ogyun Seok Woo Jin Ahn Min-Koo Han
Copyright Year	2013
Description	Author affiliation: Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea (Young-Shil Kim; Min-Woo Ha; Ogyun Seok; Woo Jin Ahn; Min-Koo Han)
Abstract	We have proposed and fabricated AlGaN/GaN MOSHEMTs employing an atomic-layer-deposited (ALD) $Al_{2}O_{3}$ gate insulator. A 10-nmm $Al_{2}O_{3}$ served as passivation layer as well as gate dielectric, which results in stable blocking characteristics. The drain leakage current of the proposed device was decreased by five orders. The leakage current of the conventional device (MESFET) with $L_{GD}$ of 15 μm was 87 μA/mm while that of the proposed device with the same $L_{GD}$ was 0.2 nA/mm. The ratio of the gate leakage current to the total leakage $(I_{G}/I_{DSS})$ was decreased to 0.1 while that of the conventional one was over 0.8. It was found that $ALD-Al_{2}O_{3}$ gate insulator made a significant contribution to the device blocking capability by suppressing gate leakage effectively. The measured breakdown voltage $(V_{BR})$ of the MOSHEMTs with $L_{GD}$ of 20 μm was 1980 V while the $V_{BR}$ of the conventional HEMTs device with the same $L_{GD}$ was 1310 V. In addition, the MOS-HEMTs with 3-μm gate exhibited good dc and pulse characteristics due to passivation effect of the $ALD-Al_{2}O_{3}$ gate insulator.
Starting Page	207
Ending Page	211
File Size	1043976
Page Count	5
File Format	PDF
ISBN	9781467351348
ISSN	1943653X
e-ISBN	9781467351362
DOI	10.1109/ISPSD.2013.6694482
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Logic gates Leakage currents Aluminum oxide HEMTs MODFETs Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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