NDLI: A vertical SiC JFET with a monolithically integrated JBS diode

Content Provider	IEEE Xplore Digital Library
Author	Sheng, K. Radhakrishnan, R. Zhang, Y. Zhao, J.H.
Copyright Year	2009
Description	Author affiliation: Electr. & Comp. Eng. Dept, Rutgers University, Piscataway, NJ, 08854, USA (Sheng, K.; Radhakrishnan, R.; Zhang, Y.; Zhao, J.H.)
Abstract	It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical JFET. The experimental results show that, in the reverse direction, the integrated switch, can conduct current by utilizing both the integrated diode and the JFET channel. This can be utilized to significantly reduce the device conduction loss in power electronic applications.
Starting Page	255
Ending Page	258
File Size	341918
Page Count	4
File Format	PDF
ISBN	9781424435258
ISSN	1943653X
DOI	10.1109/ISPSD.2009.5158050
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-14
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Schottky diodes Circuits Switches Power electronics Fabrication Voltage Ohmic contacts Schottky barriers Packaging
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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