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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tsukuda, M. Sakiyama, Y. Ninomiya, H. Yamaguchi, M. |
| Copyright Year | 2009 |
| Description | Author affiliation: Discrete Semiconductor Division, Semiconductor Company, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan (Tsukuda, M.; Sakiyama, Y.; Ninomiya, H.; Yamaguchi, M.) |
| Abstract | The authors analyzed the surge voltage causing the oscillation in detail and found that the peak electric field at punch-through E is proportional to the maximum surge voltage. The maximum surge voltage can be decreased by shifting the punch-through position W toward the cathode side because the W shift leads E lowering. This dynamic punch-through design is applicable for whole operating condition. Based on the above discussions, a PIN-diode with a novel structure was invented that achieves the ideal carrier profile for shifting the W closer to the cathode side with high electron injection during low-current operation. The simulation results show the maximum surge voltage causing oscillation was suppressed to about 50% lower and the switching loss of the diode also decreased to about 60% lower in the same time compared with the conventional structure. |
| Starting Page | 128 |
| Ending Page | 131 |
| File Size | 281520 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424435258 |
| ISSN | 1943653X |
| DOI | 10.1109/ISPSD.2009.5158018 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-14 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Switching loss Voltage Surges Semiconductor diodes Cathodes Doping profiles Electromagnetic interference Electrons Fabrication Poisson equations |
| Content Type | Text |
| Resource Type | Article |
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