NDLI: Integrated voltage reference and comparator circuits for GaN smart power chip technology

Content Provider	IEEE Xplore Digital Library
Author	King-Yuen Wong Wanjun Chen Chen, K.J.
Copyright Year	2009
Description	Author affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (King-Yuen Wong; Wanjun Chen; Chen, K.J.)
Abstract	GaN smart power chip technology has been realized using GaN-on-Si HEMT platform, featuring monolithically integrated high-voltage power devices and low-voltage peripheral devices for mixed-signal functional blocks. Two imperative functional blocks for smart power applications with wide-temperature-range stability are demonstrated. The first one is a voltage reference generator, and the second one is a temperature-compensated comparator. These circuits are capable of proper functions within a wide temperature range from room temperature up to 250 °C, illustrating the unique advantage of the wide-bandgap GaN. The voltage reference generator was designed with an AlGaN/GaN HEMT and Schottky diodes, and the devices were operated in the subthreshold regime to obtain low power consumption. The voltage reference generator achieved an average drift of less than 70 ppm/°C and can be used as a reference voltage in various biasing and sensing circuits. The temperature-dependent performance of a conventional comparator is characterized and a new temperature-compensated comparator circuit is proposed. The positive limiting level of the temperature-compensated comparator is less than 450 ppm/°C drift compared to 1350 ppm/°C in the conventional comparator.
Starting Page	57
Ending Page	60
File Size	700177
Page Count	4
File Format	PDF
ISBN	9781424435258
ISSN	1943653X
DOI	10.1109/ISPSD.2009.5158000
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-14
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Gallium nitride Integrated circuit technology HEMTs Temperature distribution Circuit stability Power generation Aluminum gallium nitride Schottky diodes Energy consumption
Content Type	Text
Resource Type	Article

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