NDLI: The Radiation Enhanced Diffusion (RED) Diode realization of a large area p+p-n-n+ structure with high SOA

Content Provider	IEEE Xplore Digital Library
Author	Vobecki, J. Zahlava, V. Hemmann, K. Arnold, M. Rahimo, M.
Copyright Year	2009
Description	Author affiliation: Microelectronics Department, Czech Technical University in Prague, CZ-166 27 Prague 6, Czech Republic (Zahlava, V.) \|\| ABB Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH - 5600 Lenzburg, Switzerland (Vobecki, J.; Hemmann, K.; Arnold, M.; Rahimo, M.)
Abstract	In this paper, we introduce a fully functional high voltage (V= 4.5 kV) and high current (I= 7 kA) $p^{+}p^{−}n^{−}n^{+}$ diode based on Radiation Enhanced Diffusion (RED) technology. The RED-Diode employs a low-doped p-layer buried at ≈100 µm to increase the dynamic avalanche ruggedness for high SOA capability. The diode was processed on a 100 mm wafer and can safely turn off 4 and 7 kA @ 140°C @ 1500 A/µs for the diameters of 51 and 91 mm, resp. The RED of Pd was also extended from He to H irradiation. Compared to the reference diode without the buried p-layer, the RED diode has equal leakage, equal SOA capability under free-wheeling conditions, similar softness, 30% and 50% higher SOA for 51 and 91 mm diodes resp. with di/dt towards 10kA/µs. Clamp-less operation is presented up to 1300 A with peak power above 15 MW at 125 °C for the 91 mm diodes. For clamping diode application, this ruggedness can be further improved.
Starting Page	144
Ending Page	147
File Size	566985
Page Count	4
File Format	PDF
ISBN	9781424435258
ISSN	1943653X
DOI	10.1109/ISPSD.2009.5158022
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-14
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor optical amplifiers Semiconductor diodes Helium Voltage Anodes Temperature Leakage current Doping profiles Electrons Annealing
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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