NDLI: Fabrication characteristics of 1.2kV SiC JBS diode

Content Provider	IEEE Xplore Digital Library
Author	Sang-Cheol Kim Wook Bahng In-Ho Kang Sung-Jae Joo Nam-Kyun Kim
Copyright Year	2008
Description	Author affiliation: Integrated Power Supply Res. Group, Korea Electrotechnol. Res. Inst., Changwon (Sang-Cheol Kim; Wook Bahng; In-Ho Kang; Sung-Jae Joo; Nam-Kyun Kim)
Abstract	The design, process, and the DC and switching characterization of 4H-SiC junction barrier Schottky (JBS) diode from room temperature up to 200degC have been presented. We used a p-type, slightly deep inner ring and a simple p-type stripe in the Schottky region, and used a field limiting ring (FLR) having variable space and width for an edge termination. The fabrication process was also optimized. The JBS diode having Schottky area of 9.8 x $10^{-3}$ $cm^{2},$ and having the space and width of 3 mum for FLR and ring showed the blocking voltage of 1.2 kV at reverse leakage current of 50 uA and the forward current density of 300 A/cm at 3A. We also investigated the operation of SiC JBS diode at temperature up to 200degC. Forward on-state voltage characteristics is 1.8 V(@1A) at room temperature, however, it is slightly increased to 2.4 V(@1A) at 200degC. The recovery characteristics of the fabricated JBS was 7.6 ns at room temperature. This result was much superior to that of Si-FRD.
Starting Page	181
Ending Page	184
File Size	507597
Page Count	4
File Format	PDF
ISBN	9781424418817
DOI	10.1109/ICMEL.2008.4559253
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	Serbia & Montenegro
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Silicon carbide Schottky diodes Temperature Aluminum Annealing Solid modeling Boron Voltage Leakage current Switching characteristics 4H-SiC JBS High temperature
Content Type	Text
Resource Type	Article

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