NDLI: Non-destructive current measurement for surface mounted power MOSFET on VRM board using magnetic field probing technique

Content Provider	IEEE Xplore Digital Library
Author	Ikeda, Y. Yamaguchi, Y. Kawaguchi, Y. Yamaguchi, M. Omura, I. Domon, T.
Copyright Year	2009
Description	Author affiliation: Kyushu Institute of Technology 1-1 Sensui-cho, Tobata-ku, Kitakyushu, Japan (Omura, I.) \|\| Toshiba Business & Life Service Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki Japan (Domon, T.) \|\| Semiconductor Company, Toshiba Corp., Discrete Semiconductor Division 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Japan (Ikeda, Y.; Yamaguchi, Y.; Kawaguchi, Y.; Yamaguchi, M.)
Abstract	This paper proposes nondestructive current measurement for surface mounted power MOSFET on VRM board using the micro-magnetic probing technique to facilitation discussion of the self-turn-on phenomenon. A notable feature of the proposed technique is that the sensor part is much smaller than that of conventional methods because this method measures the intensity of a partial magnetic field caused by wire bonding inductance, whereas the conventional method employs a loop coil structure around the current flow. The small sense part enables measurement of the VRM board itself just by setting the magnetic probe on the MOSFET package. A calibration technique is introduced to reproduce current waveform and we confirm that the obtained current waveform agrees with that obtained by the conventional Current Transformer. Using the proposed technique, we successfully detect shoot through current waveform for high-side power MOSFET during self-turn-on phenomenon in VRM board. We also sense non-uniform current flow among 3 parallel low-side power MOSFETs caused by board layout location. This study demonstrates the capability of sensing VRM board transient current and indicates the importance of board GND layout distribution behavior in determining highly accurate trade-off between switching loss and self-turn-on loss.
Starting Page	65
Ending Page	68
File Size	496617
Page Count	4
File Format	PDF
ISBN	9781424435258
ISSN	1943653X
DOI	10.1109/ISPSD.2009.5158002
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-14
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Current measurement MOSFET circuits Power MOSFET Magnetic field measurement Magnetic sensors Sensor phenomena and characterization Inductance measurement Fluid flow measurement Wire Bonding
Content Type	Text
Resource Type	Article

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