NDLI: Process-variation- and random-dopant-induced static noise margin fluctuation in nanoscale CMOS and FinFET SRAM cells

Content Provider	IEEE Xplore Digital Library
Author	Tien-Yeh Li Chih-Hong Hwang Yiming Li
Copyright Year	2009
Description	Author affiliation: Department of Communication Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan (Tien-Yeh Li; Chih-Hong Hwang; Yiming Li)
Abstract	In this study, a three-dimensional “atomistic” coupled device-circuit simulation approach is advanced to investigate the process-variation-effect (PVE) and random dopant fluctuation (RDF) induced characteristic fluctuations in planar metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. Our preliminary results show that the RDF dominates the fluctuation of static noise margin (SNM). As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, the normalized RDF-induced SNM fluctuation increases from 4% to 80%. To reduce the device variability induced fluctuation in circuit, a device with vertical-doping-profile and raised Vth is employed. The SNM is 3 times larger than the original 16-nm-gate SRAM. Moreover, the normalized RDF-induced SNM fluctuation is reduced by a factor of 2.67. Additionally, a 16-nm-gate silicon-on-insulator fin-type field-effect-transistor is used to further improve the SNM of SRAM. Due to the superior electrostatic integrity and larger effective device width than planar MOSFETs, the SNM of 16-nm-gate FinFET SRAM is six times larger than the original 16 nm SRAM with five times smaller SNM fluctuation. The study investigates the roll-off characteristics of SNM and provides an insight into design of fluctuation resistant nanoscale SRAM.
Starting Page	24
Ending Page	27
File Size	592556
Page Count	4
File Format	PDF
ISBN	9781424449521
DOI	10.1109/ASQED.2009.5206305
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-15
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Fluctuations SRAM chips Random access memory MOSFET circuits CMOS process FinFETs Resource description framework Circuit noise Electrostatics
Content Type	Text
Resource Type	Article

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