NDLI: Modeling the I-V characteristics of fully-depleted SOI MOSFETs including self-heating

Content Provider	IEEE Xplore Digital Library
Author	Arora, N.D. Su, L.T. Doyle, B.S. Antoniadis, D.A.
Copyright Year	1994
Description	Author affiliation: Digital Equipment Corp., Hudson, MA, USA (Arora, N.D.)
Abstract	Fully-depleted Silicon-On-Insulator (SOI) MOSFETs are a strong potential candidate for future ULSI CMOS applications. In order to evaluate the merits of these devices an accurate model of the output characteristics applicable to sub-half micron channel lengths is needed. Previous work on modeling the I-V (current-voltage) characteristics of thin-film SOI MOSFETs has mainly been based on inaccurate velocity-field relation for carriers in the channel region. Moreover, in most models, conductance and capacitances show discontinuities at the transition points from subthreshold to saturation to linear regions. In this paper we report a physically based continuous analytical model for SOI MOSFETs that is represented by a single drain current equation valid in all regions of device operation ofinterest.
Starting Page	19
Ending Page	20
File Size	225699
Page Count	2
File Format	PDF
ISBN	0780324064
DOI	10.1109/SOI.1994.514208
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-03
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Temperature dependence Silicon on insulator technology Semiconductor device modeling Threshold voltage Temperature measurement Data mining CMOS technology Ultra large scale integration Transistors
Content Type	Text
Resource Type	Article

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