NDLI: A full-monolithic LNA in 0.18/spl mu/m SiGe: performance variation due to ESD protection

Content Provider	IEEE Xplore Digital Library
Author	Haigang Feng Haolu Xie Wang, A. Yuhua Cheng Lloyd, S.
Copyright Year	2004
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA (Haigang Feng; Haolu Xie; Wang, A.)
Abstract	This paper reports design of a 5GHz full-monolithic LNA implemented in a 0.18/spl mu/m 90GHz f/sub T/ SiGe process with and without RF ESD protection. The RF ESD protection is provided by a simple diode ESD protection structure for 2kV ESD protection. Influences of the RF ESD protection structure on the LNA performance were investigated. Measurement results show substantial performance degradation for the LNA with ESD protection compared with that without ESD protection: i.e. a 4dB decrease in gain from 21.75dB dropping to 17.50dB and 0.3dB increase in noise figure from 2.53dB to 2.82dB. Laser cut was used to remove the RF ESD protection device from the LNA circuit in measurements.
Starting Page	1226
Ending Page	1229
File Size	1135842
Page Count	4
File Format	PDF
ISBN	078038511X
DOI	10.1109/ICSICT.2004.1436752
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Electrostatic discharge Protection Radio frequency Diodes Gain measurement Noise measurement Degradation Performance gain
Content Type	Text
Resource Type	Article

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Noise analysis of ESD structures and impacts on a fully-integrated 5.5 GHz LNA in 0.18/spl mu/m SiGe BiCMOS

Noise analysis of ESD structures and impacts on a fully-integrated 5.5GHz LNA in 0.18/spl mu/m SiGe BiCMOS

Investigation of ESD devices in 0.18 /spl mu/m SiGe BiCMOS process

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