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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bo Yan Yi Shi Lin Pu Jianming Zhu Pin Han Shulin Gu Bo Shen Youdou Zheng |
| Copyright Year | 2004 |
| Description | Author affiliation: Dept. of Phys., Nanjing Univ., China (Bo Yan; Yi Shi; Lin Pu; Jianming Zhu; Pin Han; Shulin Gu; Bo Shen; Youdou Zheng) |
| Abstract | In this work, we have performed epitaxy of Ge dots over Si nanometer-scale columns on Si (100) substrate. A two-step fabrication process has been developed. First, Si buffer layer is deposited on Si substrate by LPCVD and then Ge dots grow on the Si layer. The Ge dots on Si with the packing density as high as 1.6x 10/sup 12/cm/sup -2/ and the average size is 8nm. SEM, XRD, and HRTEM measurements indicate that Ge dots were formed on each nanometer Si column separately. This growth obeys the Stranski-Krastanov (S-K) mode in local area. |
| Starting Page | 902 |
| Ending Page | 905 |
| File Size | 928023 |
| Page Count | 4 |
| File Format | |
| ISBN | 078038511X |
| DOI | 10.1109/ICSICT.2004.1436652 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-10-18 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | US Department of Transportation Substrates Quantum dots Etching Quantum dot lasers Temperature Scanning electron microscopy Buffer layers Nanoscale devices Potential well |
| Content Type | Text |
| Resource Type | Article |
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