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Content Provider | IEEE Xplore Digital Library |
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Author | Zhao Yang Zhang Dawei Tian Lilin |
Copyright Year | 2004 |
Description | Author affiliation: Inst. of Microelectron., Tsinghua Univ., Beijing, China (Zhao Yang; Zhang Dawei; Tian Lilin) |
Abstract | A new electron and hole mobility analytical model for strained-Si MOSFETs has been developed. The mobility enhancement in the strained silicon layer is accurately studied and described by means of simple analytical expressions. The dependence of mobility to strained-Si layer thickness in the model is highlighted, and as usual, the germanium mole fraction, surface roughness and the channel doping concentration are needed in the model. The model fits well extracted mobility data based on drain current measurements and Monte Carlo simulation results. |
Starting Page | 1216 |
Ending Page | 1219 |
File Size | 923611 |
Page Count | 4 |
File Format | |
ISBN | 078038511X |
DOI | 10.1109/ICSICT.2004.1436749 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2004-10-18 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Semiconductor process modeling Charge carrier processes Electron mobility Analytical models MOSFETs Silicon Germanium Rough surfaces Surface roughness Doping |
Content Type | Text |
Resource Type | Article |
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