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Content Provider | IEEE Xplore Digital Library |
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Author | Hong Yang Ning Sa Liang Tang Xiaoyan Liu Jinfeng Kang Ruqi Han Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Kwong, D.-L. |
Copyright Year | 2004 |
Description | Author affiliation: Inst. of Microelectron., Peking Univ., Beijing, China (Hong Yang) |
Abstract | In this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) for the ultra thin HfN/HfO/sub 2/ gate stack (EOT/spl sim/9nm) under negative constant voltage stress (CVS) was studied. Area-scaling consistent with Weibull statistics as in SiO/sub 2/ was observed in the HfN/HfO/sub 2/ gate stack, demonstrating that intrinsic effects dominate TDDB characteristics of the ultra thin HfN/HfO/sub 2/ gate stack. A new model on the mechanism of electric-field dependent TDDB was proposed. In this model, the reliability of HfN/HfO/sub 2/ gate stack is dominated by the breakdown of HfO/sub 2/ bulk layer under high electric field stressing and by the breakdown of the interfacial layer (IL) under low electric field stressing, respectively. |
Starting Page | 808 |
Ending Page | 811 |
File Size | 953711 |
Page Count | 4 |
File Format | |
ISBN | 078038511X |
DOI | 10.1109/ICSICT.2004.1436629 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2004-10-18 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Hafnium oxide Stress Electric breakdown Breakdown voltage Capacitors Gate leakage Weibull distribution Manufacturing Testing Design for quality |
Content Type | Text |
Resource Type | Article |
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