NDLI: Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealing

Content Provider	IEEE Xplore Digital Library
Author	Leng Seow Tan Hai Ting Wang Eng Fong Chor
Copyright Year	2004
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore (Leng Seow Tan; Hai Ting Wang; Eng Fong Chor)
Abstract	Investigations of post-implantation annealing were carried out on gallium nitride wafers that had been implanted with beryllium ions. The thermal processes performed were rapid thermal annealing (RTA) at 1100/spl deg/C for 120 s, pulse laser annealing (PLA) using a 248 nm KrF excimer laser at an energy of 0.2 Jcm/sup -2/ and a combination of both. It was found that the photoluminescence intensity of the PLA-treated sample was vastly improved over the RTA sample and even the as grown sample. However, off-resonance Raman and high resolution X-ray diffraction spectroscopy showed that many defects that result from the Be implantation still remained in the GaN wafer, because of the shallow penetration depth of the 248 nm laser. These defects can be annealed out, however, with a subsequent RTA process. Thus, a combination of PLA and RTA is recommended to produce good optical activation of the Be-implanted GaN, and to repair the crystal defects that arise from the implantation.
Starting Page	2320
Ending Page	2323
File Size	1048353
Page Count	4
File Format	PDF
ISBN	078038511X
DOI	10.1109/ICSICT.2004.1435310
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	III-V semiconductor materials Gallium nitride Optical pulses Rapid thermal annealing Rapid thermal processing X-ray lasers Programmable logic arrays Spectroscopy Photoluminescence Energy resolution
Content Type	Text
Resource Type	Article

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