NDLI: Simulation and test of a novel SOI high temperature pressure sensor

Content Provider	IEEE Xplore Digital Library
Author	Fu Xiansong Yao Suying Hou Shuzhi Zhang Wei Zhao Yiqiang Zhang Shengcai Zhang Weixin
Copyright Year	2004
Description	Author affiliation: Inst. of Electron. Inf. & Eng., Tianjin Univ., China (Fu Xiansong; Yao Suying; Hou Shuzhi; Zhang Wei; Zhao Yiqiang; Zhang Shengcai; Zhang Weixin)
Abstract	A novel high temperature pressure sensor is designed by the authors. It is based on a SOI construction, replacing the traditional pn junction insulation with SiO/sub 2/ insulation. The dielectric isolation guarantees low leakage current at high temperature. Thus, the sensors could be used in a high temperature environment. In this paper, a series of SOI high temperature sensors were simulated and analyzed by ANSYS software. The influence of thickness and length-width ratio of the strain diaphragm on the theoretical output was discussed. Accordingly, an optimal design of the strain diaphragm was presented and the location of the piezoresistors was determined. Finally, the sensors were fabricated according to the layout, and then tested. The test results showed that the actual measurement values are consistent with the simulation. The output voltage keeps good linearity with input pressure even at high temperatures. The properties of the product are satisfactory.
Starting Page	1824
Ending Page	1827
File Size	719661
Page Count	4
File Format	PDF
ISBN	078038511X
DOI	10.1109/ICSICT.2004.1435189
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Testing Silicon Capacitive sensors Plasma temperature Piezoresistive devices Mechanical sensors Substrates Etching Dielectrics and electrical insulation
Content Type	Text
Resource Type	Article

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