NDLI: The heterogeneous integration approach for advanced semiconductor materials and microsystems

Content Provider	IEEE Xplore Digital Library
Author	Cheung, N.W.
Copyright Year	2004
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA (Cheung, N.W.)
Abstract	Recent advances in bonding and thin-layer splitting technologies enables a new approach to integrate dissimilar semiconductor materials and microsystems. The integration process incorporates the bonding of two substrates and the use of delamination to achieve wafer-scale or die-scale layer transfer. This 'paste-and-cut' integration method is an appealing alternative to direct deposition approaches because each material or microsystem layer for a given device function can be grown or fabricated on an ideally suited substrate and then combined with a dissimilar receptor substrate. In this paper, we review available technologies for pasting (direct bonding, anodic bonding, metal bonding, and polymeric bonding) and for cutting (ion cut, chemical cut, mechanical cut, and laser liftoff). Advanced semiconductor substrates, MEMS, and photonics-on-Si are used as examples to illustrate the versatility of this approach.
Starting Page	2167
Ending Page	2171
File Size	1477901
Page Count	5
File Format	PDF
ISBN	078038511X
DOI	10.1109/ICSICT.2004.1435273
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor materials Substrates Wafer bonding Chemical technology Chemical lasers Delamination Polymers Laser beam cutting Semiconductor lasers Micromechanical devices
Content Type	Text
Resource Type	Article

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