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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Weilian Zhang Baimei Tan Jiaxi Li Junsheng Sun Enhuai Zhang |
| Copyright Year | 2001 |
| Description | Author affiliation: Hebei Univ. of Technol., Tianjin, China (Weilian Zhang) |
| Abstract | In this paper, we present our research on the growth of CZSi in a ring permanent magnetic field (PMCZ). It was shown that in the ring permanent magnetic field thermal convection in melt and centrifugal pumping flows due to crystal rotation can be strongly suppressed so that the fluctuations of temperature and micro-growth rate at interface are restrained effectively. The oxygen concentration in as-grown crystal is lower and the dopant is more homogeneous. The mechanism of the effect of the permanent magnetic field on the growth of CZSi is also discussed. |
| Sponsorship | Chinese Inst. Electron. |
| Starting Page | 280 |
| Ending Page | 283 |
| File Size | 209878 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780365208 |
| DOI | 10.1109/ICSICT.2001.981473 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-22 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Thermal conductivity Magnetic devices Magnetic fields Temperature Thermal expansion Oxygen Impurities Gravity Electromagnetic fields |
| Content Type | Text |
| Resource Type | Article |
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