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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ey Goo Kang Seung Hyun Moon Man Young Sung |
| Copyright Year | 2001 |
| Description | Author affiliation: Dept. of Electr. Eng., Korea Univ., Seoul, South Korea (Ey Goo Kang) |
| Abstract | A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19/spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown finally occurred. |
| Sponsorship | Chinese Inst. Electron. |
| Starting Page | 127 |
| Ending Page | 130 |
| File Size | 261128 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780365208 |
| DOI | 10.1109/ICSICT.2001.981439 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-22 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electric variables Electrodes Insulated gate bipolar transistors Power integrated circuits Cathodes Anodes Current density Numerical simulation Threshold voltage Medical simulation |
| Content Type | Text |
| Resource Type | Article |
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