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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Guangdi Shen Chen Xu Jianxin Chen Deshu Zou Chen Shi Jun Deng Jingyu Du Guo Gao |
| Copyright Year | 2001 |
| Description | Author affiliation: Coll. of Electron. Eng., Beijing Polytech. Univ., China (Guangdi Shen) |
| Abstract | The development of SiGe/Si HBT in the world is briefly reviewed and our recent research progress in high frequency SiGe/Si HBT is reported. A novel modulation doped quantum well base SiGe/Si HBT is proposed and fabricated. This new structure can reduce the base resistance effectively without increasing the average doping level in base. SiGe/Si HBT with /spl beta/ac over 24000 at 77 K was designed and fabricated. The effects of parasitic barrier induced by boron segregation and outdiffusion in the base were carefully studied, and reasonable width of i-SiGe spacers to prevent these phenomena was obtained by experiment and simulation. The nonideal current of Ib and Ic and their effects on the performance of the device were investigated. |
| Sponsorship | Chinese Inst. Electron. |
| Starting Page | 580 |
| Ending Page | 585 |
| File Size | 335368 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780365208 |
| DOI | 10.1109/ICSICT.2001.981546 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-22 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors III-V semiconductor materials CMOS technology Costs Radio frequency Doping Microwave transistors FET integrated circuits |
| Content Type | Text |
| Resource Type | Article |
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