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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Liu Yugui Wang Weijun Luo Siwei Jiang Zeliu Pu Jiliang |
| Copyright Year | 2001 |
| Description | Author affiliation: Hebei Semicond. Res. Inst., Shijiazhuang, China (Liu Yugui) |
| Abstract | We have worked out a method to obtain T-gate structures of sub-micron size with the Leica VB-5HR e-beam lithography system, tri-layer resists, and several levels of dose assignments, and applied this method to make GaAs microwave and millimeter wave devices and integrated circuits. Also, we have studied on lithography to fabricate fine lines of sub-micron even to nano-level, and we obtained the golden lifted-off features of 17 nm. |
| Sponsorship | Chinese Inst. Electron. |
| Starting Page | 472 |
| Ending Page | 474 |
| File Size | 160482 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780365208 |
| DOI | 10.1109/ICSICT.2001.981520 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-22 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electron beams Lithography Millimeter wave technology Integrated circuit technology Resists Gallium arsenide Microwave devices Microwave theory and techniques Millimeter wave integrated circuits Millimeter wave devices |
| Content Type | Text |
| Resource Type | Article |
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