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Content Provider | IEEE Xplore Digital Library |
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Author | Yu-han Xie Yin-yin Lin Ting-ao Tang |
Copyright Year | 2001 |
Description | Author affiliation: Dept. of Microelectron., Fudan Univ., Shanghai, China (Yu-han Xie) |
Abstract | BST thin film is thought as the best candidate to substitute for SiO/sub 2/ thin film in high density DRAM application due to its high dielectric constant and low leakage current property. In this paper, (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ (x=0-1) thin films with pure perovskite phase and good surface morphology were successfully prepared by the MOD method, in which acetates and titanium(IV) isopropoxide were used as source materials while acetic acid and ethylene glycol ethyl were used as solvents. The films were heated by two steps pyrolysis and annealing. The precursor and the gel heated at different temperatures were analyzed by thermal analysis and infrared absorption spectroscopy analysis to ascertain mechanism of the heating process and choose an appropriate heating condition. The phase-formation characteristics of the films were investigated by X-ray diffraction. For the film prepared under the optimized condition, dielectric constant distributed between 1036 and 340 when frequency varied from 10 kHz to 3 MHz. |
Sponsorship | Chinese Inst. Electron. |
Starting Page | 722 |
Ending Page | 725 |
File Size | 264364 |
Page Count | 4 |
File Format | |
ISBN | 0780365208 |
DOI | 10.1109/ICSICT.2001.981605 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2001-10-22 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Infrared heating Dielectric thin films Infrared spectra Binary search trees Random access memory High-K gate dielectrics Leakage current Strontium Surface morphology Anti-freeze |
Content Type | Text |
Resource Type | Article |
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