NDLI: Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM

Content Provider	IEEE Xplore Digital Library
Author	Mezhibovsky, J. Teman, A. Fish, A.
Copyright Year	2011
Description	Author affiliation: Low Power Circuits and Systems Lab (LPC&S), Ben-Gurion University of the Negev, P.O.Box 653, Be'er Sheva, Israel 84105 (Mezhibovsky, J.; Teman, A.; Fish, A.)
Abstract	Recent research has shown that minimum energy operation of digital circuits is in the sub-threshold region, and a good trade-off between power and performance can be achieved through operation at near threshold supply voltages. However, due to process variations and device mismatch at nanoscale technology nodes, voltage scaling of standard SRAMs is limited to strong-inversion operation. One of the techniques for enabling operation at low voltages is implementation of a Supply Feedback mechanism that internally weakens the pull-up current during write operations. This concept was recently implemented in a 9T Supply Feedback SRAM (SF-SRAM) cell, fabricated and successfully tested in a 40nm CMOS technology. In this paper, we review existing low voltage SRAM solutions, overview the SF-SRAM cell, and show its scalability into deep nanoscale technologies by using the 22nm predictive model.
Starting Page	136
Ending Page	141
File Size	740296
Page Count	6
File Format	PDF
ISBN	9781457716164
ISSN	21641706
e-ISBN	9781457716171
e-ISBN	9781457716157
DOI	10.1109/SOCC.2011.6085135
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-26
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Low voltage Transistors Predictive models Semiconductor device modeling Scalability Nanoscale devices
Content Type	Text
Resource Type	Article

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