NDLI: A high-performance low V 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control

Content Provider	IEEE Xplore Digital Library
Author	Hao-I Yang Shih-Chi Yang Mao-Chih Hsia Yung-Wei Lin Yi-Wei Lin Chien-Hen Chen Chi-Shin Chang Geng-Cing Lin Yin-Nien Chen Ching-Te Chuang Wei Hwang Shyh-Jye Jou Nan-Chun Lien Hung-Yu Li Kuen-Di Lee Wei-Chiang Shih Ya-Ping Wu Wen-Ta Lee Chih-Chiang Hsu
Copyright Year	2011
Description	Author affiliation: Dept. of Electronics Eng. & Inst. of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, R. O. C. (Hao-I Yang; Shih-Chi Yang; Mao-Chih Hsia; Yung-Wei Lin; Yi-Wei Lin; Chien-Hen Chen; Chi-Shin Chang; Geng-Cing Lin; Yin-Nien Chen; Ching-Te Chuang; Wei Hwang; Shyh-Jye Jou; Nan-Chun Lien) \|\| Faraday Technology Corporation, Hsinchu, Taiwan, R. O. C. (Hung-Yu Li; Kuen-Di Lee; Wei-Chiang Shih; Ya-Ping Wu; Wen-Ta Lee; Chih-Chiang Hsu)
Abstract	This paper describes a high-performance low V SRAM with a disturb-free 8T cell. The SRAM utilizes single-ended buffer Read, and cross-point data-aware Write Word-Line structure with adaptive VVSS control to eliminate Read disturb and Half-Select disturb, thus facilitating bit-interleaving architecture and achieving low V. A 512Kb test chip is implemented in UMC 55nm Standard Performance (SP) CMOS technology. The measurement results demonstrate operating frequency of 943MHz at 1.2V VDD and 209MHz at 0.6V VDD.
Starting Page	197
Ending Page	200
File Size	1746690
Page Count	4
File Format	PDF
ISBN	9781457716164
ISSN	21641706
e-ISBN	9781457716171
e-ISBN	9781457716157
DOI	10.1109/SOCC.2011.6085080
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-26
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Computer architecture Microprocessors Transistors Semiconductor device measurement Frequency measurement CMOS integrated circuits
Content Type	Text
Resource Type	Article

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