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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rudolph, M. Heymann, P. |
| Copyright Year | 2007 |
| Description | Author affiliation: Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin (Rudolph, M.; Heymann, P.) |
| Abstract | Accurate RF noise modeling of heterojunction bipolar transistors requires a proper model for the correlation of the shot-noise sources based on the respective time constant. This is incompatible with the present large-signal models, which, therefore, rely on non-correlated shot-noise sources and are not capable of predicting the RF noise with sufficient accuracy. In this paper, we propose a new configuration of the shot-noise sources which approximates the correlation by taking advantage of the large-signal model's equivalent circuit topology. The model is verified by measurements. |
| Starting Page | 1783 |
| Ending Page | 1786 |
| File Size | 1418846 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424406870 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2007.380076 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-06-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Heterojunction bipolar transistors Radio frequency Semiconductor device noise Circuit noise Equivalent circuits Integrated circuit noise White noise Integrated circuit modeling Delay effects Topology Heterojunction bipolar transistor semiconductor device modeling equivalent circuit Noise Shot noise |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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