NDLI: Adjacent Channel Power Contributions of Silicon MOSFET Switches in RF and Microwave Systems

Content Provider	IEEE Xplore Digital Library
Author	Caverly, R.H.
Copyright Year	2007
Description	Author affiliation: Villanova Univ., Villanova (Caverly, R.H.)
Abstract	Spectral regrowth is a major design issue confronting the wireless transmitter and system designer. Considerable work has been performed by a number of investigators into the level of spectral regrowth produced by power amplifiers but little work to date has studied how the spectral regrowth is influenced by FET-based switches in the same RF path. This paper looks at the adjacent channel power generated by silicon MOSFET switches. A methodology based on a Taylor series expansion of both the channel resistance and the diffused region capacitance nonlinearities show how nonlinear signal contributions by silicon MOSFET switches influence spectral regrowth and how the MOSFET geometry may be changed to control this contribution.
Starting Page	1051
Ending Page	1054
File Size	406262
Page Count	4
File Format	PDF
ISBN	1424406870
ISSN	0149645X
DOI	10.1109/MWSYM.2007.380238
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon MOSFET circuits Power MOSFET Switches Radio frequency Transmitters Power amplifiers Radiofrequency amplifiers Power generation Taylor series nonlinear system Adjacent channel power ratio (ACPR) adjacent channel interference MOSFET nonlinear distortion
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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