NDLI: Compact InP HBT Power Amplifiers Using Integrated Thick BCB Dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Hacker, J.B. Wonill Ha Hillman, C. Urteaga, M. Pierson, R. Brar, B.
Copyright Year	2007
Description	Author affiliation: Teledyne Sci. Co., Thousand Oaks (Hacker, J.B.)
Abstract	An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process for compact millimeter-wave power amplifier MMICs has been developed with integrated 15 mum thick layers of BCB dielectric. The thick BCB layers provide low-loss millimeter-wave transmission lines with much smaller dimensions compared to conventional microstrip placed directly on the semiconductor substrate. A single layer BCB process with two metal layers is used for microstrip circuits, and a two-layer BCB process (30 mum total thickness) with three metal layers is used for stripline MMICs. The stripline MMICs inherent shielding enables new MMIC packaging concepts such as three dimensional embedded circuits that are enabling for low-cost phased array antennas architectures. A two-stage cascode power amplifier has been fabricated and characterized using microstrip lines on a single thick layer of BCB. The compact 6 $mm^{2}$ Ka-band PA demonstrated 1.1 Watts of saturated output power at 38 GHz, a dc power added efficiency (PAE) was 28.6%, and a small signal gain of 14.9 dB. The measured die area power density is 18.3 $W/cm^{2}.$ These results demonstrate the potential of thick BCB microstrip and stripline MMICs to enable compact power amplifiers for space constrained millimeter-wave applications.
Starting Page	805
Ending Page	808
File Size	5101503
Page Count	4
File Format	PDF
ISBN	1424406870
ISSN	0149645X
DOI	10.1109/MWSYM.2007.380081
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Heterojunction bipolar transistors Power amplifiers MMICs Microstrip Dielectric substrates Millimeter wave transistors Stripline Circuits Phased arrays stripline power amplifier indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) millimeter-waves
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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