NDLI: Survivability of AlGaN/GaN HEMT

Content Provider	IEEE Xplore Digital Library
Author	Yaochung Chen Coffie, R. Wen-Ben Luo Wojtowicz, M. Smorchkova, I. Benjamin Heying Young-Min Kim Aust, M.V. Oki, A.
Copyright Year	2007
Description	Author affiliation: Northrop Grumman, Redondo Beach (Yaochung Chen; Coffie, R.; Wen-Ben Luo; Wojtowicz, M.; Smorchkova, I.; Benjamin Heying; Young-Min Kim; Aust, M.V.; Oki, A.)
Abstract	Using harmonic balance simulations, we have examined the survivability limiting mechanisms of a 0.2 mum T-gate AlGaN/GaN HEMT device under RF overdrive. Simulations are performed using a 4-finger 200 mum AlGaN/GaN HEMT device model. Two catastrophic failure mechanisms are identified. At low quiescent drain-source voltages (<10 V), the forward turn-on of the gate diode may exceed the burnout limit, resulting in a sudden failure. Increasing the quiescent drain-source voltage increases the peak drain-gate voltage and changes the failure mechanism to gate-drain reverse breakdown. The model is consistent with experimental measurements.
Starting Page	307
Ending Page	310
File Size	783653
Page Count	4
File Format	PDF
ISBN	1424406870
ISSN	0149645X
DOI	10.1109/MWSYM.2007.380413
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs Pulse measurements Diodes Radio frequency Failure analysis Breakdown voltage Low-noise amplifiers Radiofrequency amplifiers Harmonic Balance AlGaN/GaN HEMT Low Noise Amplifier Survivability
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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