NDLI: A 90-nm CMOS Broadband and Miniature Q-band Balanced Medium Power Amplifier

Content Provider	IEEE Xplore Digital Library
Author	Jeng-Han Yi-Lin Lee Tian-Wei Huang Cheng-Ming Yu Chern, J.G.J.
Copyright Year	2007
Description	Author affiliation: Nat. Taiwan Univ., Taipei (Jeng-Han; Yi-Lin Lee; Tian-Wei Huang; Cheng-Ming Yu; Chern, J.G.J.)
Abstract	This paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thin-film microstrip (TFMS) line technique, has a compact chip size of 0.78 x 0.92 $mm^{2}.$ The MMIC demonstrates a measured gain of 14.5 dB at 48 GHz. With the feature of the balanced amplifier, the MMIC has a 3-dB bandwidth up to 37.2 % from 35 to 51 GHz with flat gain and return loss frequency response. Furthermore, the balanced amplifier delivers a saturation output power of 10.6 dBm with 8% PAE and OPldB is 7.5 dBm.
Starting Page	1129
Ending Page	1132
File Size	1394267
Page Count	4
File Format	PDF
ISBN	1424406870
ISSN	0149645X
DOI	10.1109/MWSYM.2007.380328
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Broadband amplifiers Power amplifiers CMOS technology MMICs Couplers Transistors Microstrip Gain measurement Semiconductor device measurement Bandwidth broad-side coupler Millimeter-wave (MMW) Q-band CMOS balanced amplifier thin-film microstrip (TFMS)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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