NDLI: Vacuum ultraviolet radiation source based on the $2^{nd}$ emission continuum of the neon excimer (λ,−84NM) generated by a “windowless” dielectric barrier discharge

Content Provider	IEEE Xplore Digital Library
Author	Carman, R.J. Kane, D.M. Ward, B.K.
Copyright Year	2008
Description	Author affiliation: Dept. of Phys., Macquarie Univ., Sydney, NSW (Carman, R.J.; Kane, D.M.; Ward, B.K.)
Abstract	Summary form only given as follows. High-average-power, VUV incoherent light sources in the wavelength range 50-100 nm have potential use in advanced optical lithography applications, including the manufacture of next generation silicon chips. Sub 100 nm VUV lithography is a possible alternative to extreme ultraviolet (EUV) lithography (lambda~13.5 nm), as a future replacement for the current lithography standards based on ArF lasers (lambda=193 nm). We have characterised the VUV emission spectra from $Ne_{2}$ excimers generated in a "windowless" high-pressure dielectric barrier discharge (DBD) source. Experiments were conducted using both AC (sinusoidal) and pulsed voltage power supplies to investigate efficiency issues for the production of the $Ne_{2}$ $2^{nd}$ continuum between 80-90 nm for a range of Ne pressures 0.1-1.0 bar and input electrical power loadings. The results show that the DBD source output is remarkably monochromatic with its observed spectral output in the ultraviolet consisting of only the principal $Ne_{2}$ excimer emission band centered at 84 nm, and a weak H Lyman alpha line at 121.6 nm. Halpha line emission was observed due to the presence of trace $H_{2}$ (or $H_{2}O)$ impurities that quench $Ne_{2}$ species (and 84 nm output) via resonant $Ne_{2}+H_{2}$ collisions. No other emission features were detected across the entire scanned VUV/UV range (30 nm-400 nm). Time-resolved signatures for the $1^{st}/2^{nd}$ $Ne_{2}$ continua (75 nm/84 nm) were also recorded for different operating conditions. An important result from the experiments has been to show that pulsed voltage excitation substantially increases the electrical to VUV (84 nm) conversion efficiency by a factor 1.5times compared to AC excitation, for identical electrical power loadings. This jump in efficiency, for a $Ne_{2}$ excimer lamp, has not been reported previously, as far as we are aware, and is consistent with our earlier experiments on $Xe_{2}$ (lambda=172 nm) barrier discharge lamps.
Starting Page	1
Ending Page	1
File Size	80400
Page Count	1
File Format	PDF
ISBN	9781424419296
ISSN	07309244
DOI	10.1109/PLASMA.2008.4591183
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-15
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Lithography Discharges Dielectrics Ultraviolet sources Loading Fault location Fault diagnosis
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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