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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Choi, J.K. Heo, D. Han, I.K. Choi, W.J. Park, Y.J. Cho, W.J. Song, J.E. Lee, J.I. Kim, Y.D. |
| Copyright Year | 2003 |
| Description | Author affiliation: Korea Inst. of Sci. & Technol., Seoul, South Korea (Choi, J.K.; Heo, D.; Han, I.K.; Choi, W.J.; Park, Y.J.; Cho, W.J.; Song, J.E.; Lee, J.I.) |
| Abstract | Summary form only given, as follows. Summary form only given. We have studied optical and structural properties of a-SiN/sub x/ thin films prepared by plasma method. While there are several methods of preparing a-Si based alloy (a-SiN/sub x/), plasma methods, such as PECVD and sputtering, have been widely used because of its good film quality and low deposition temperature. a-SiN samples were prepared on c-Si substrates by PECVD at 270/spl deg/C with pure NH/sub 3/ and 5%-diluted SiH/sub 4/ in N/sub 2/ as a precursor, and plasma was generated by RF power. All the deposition conditions were fixed except plasma power. We have observed two photolummescence (PL) peaks at about 3.0 eV and 2.5 eV at room temperature by He-Cd laser with 3.82 eV excitation energy. The former peak is due to the defect structures in SiN/sub x/ and the latter small silicon cluster. With the increase of plasma power, the PL properties of green band were improved with the increase of intensity, and the narrowing of full width at half-maximum. This result is attributed to the enhancement of nano-crystal silicon because the plasma power enhances the formation of radicals such as SiH, SiH/sub 2/, and SiH/sub 3/from precursors. |
| Sponsorship | Plasma Sci. & Applications Committee of the IEEE Nucl. & Plasma Sci. Soc. Hanyang Univ. Japan Soc. Plasma Res. Assoc. Korea Atomic Energy Res. Inst. Korea Basic Sci. Inst. Korea Vacuum Soc |
| File Size | 64991 |
| File Format | |
| ISBN | 078037911X |
| ISSN | 07309244 |
| DOI | 10.1109/PLASMA.2003.1229990 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-05 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photoluminescence Plasma temperature Plasma properties Optical films Sputtering Silicon Substrates Power generation Radio frequency Laser excitation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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