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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kim, D.W. Lee, H.Y. Kim, H.S. Sung, Y.J. Chae, S.H. Yeom, G.Y. |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. of Mater. Eng., Sungkyunkwan Univ., Suwon, South Korea (Kim, D.W.; Lee, H.Y.; Kim, H.S.) |
| Abstract | Summary form only given, as follows. Silicon carbide(SiC) is one of the attractive semiconductor materials due to its high temperature stability and high thermal conductivity for electronic devices operating at high temperature and high power levels Due to its excellent electrical, thermal, and mechanical properties, the SiC is also used as the substrate for microelectromechanical system (MEMS) However, high rate and anisotropic plasma etching is a prerequisite for the application of SiC to these device fabrications In this study, SiC was etched using a magnetic enhanced inductively coupled plasma (MEICP) in fluorine containing gases such as NF/sub 3/, SF/sub 6/, and CF/sub 4/, and over than 2/min of high etch rate could be obtained in SF/sub 6/ based plasmas. The etch characteristics of SiC and etch selectivities over mask materials such as photoresist and metals (Al, Ni, Cu, etc) were also investigated as a function of operating pressure, inductive power, and applied dc bias voltage to the substrate, etc. The etch characteristics were investigated using an optical emission spectroscopy (OES) and quadrupole mass spectrometer (QMS) The etch profiles of patterned SiC were observed by a scanning electron microscopy (SEM). |
| Sponsorship | Plasma Sci. & Applications Committee of the IEEE Nucl. & Plasma Sci. Soc. Hanyang Univ. Japan Soc. Plasma Res. Assoc. Korea Atomic Energy Res. Inst. Korea Basic Sci. Inst. Korea Vacuum Soc |
| File Size | 67464 |
| File Format | |
| ISBN | 078037911X |
| ISSN | 07309244 |
| DOI | 10.1109/PLASMA.2003.1228552 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-05 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Couplings Plasma applications Etching Silicon carbide Plasma properties Plasma temperature Plasma devices Plasma materials processing Plasma stability Thermal conductivity |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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