Please wait, while we are loading the content...
| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kim, D.Y. Seo, C.K. Sim, M.S. Kim, C.H. Bae, S.J. Junsin Yi |
| Copyright Year | 2003 |
| Description | Author affiliation: Sch. of Electr. & Comput. Eng., Sungkyunkwan Univ., Suwon, South Korea (Kim, D.Y.; Seo, C.K.; Sim, M.S.; Kim, C.H.; Bae, S.J.; Junsin Yi) |
| Abstract | Summary form only given. Recently, the plastic materials are very useful as the substrate of the flexible, light and portable electronics. Although the plastic substrates have many advantages such as thin film solar cell, thin film transistor and thin film sensors, its application has a difficulty of the limitation of temperature, surface hardness, and corrosion resistance on the acid or alkali. In general, hydrogenated amorphous silicon (a-Si:H) films are found in a broad range of electronic devices such as radiation detectors, photovoltaic (PV) devices, thin film transistors (TFTs), display devices, and memory device applications. However, a-Si:H detectors and TFTs show some limitations because of their low carrier mobility. a-Si:H solar cells have exhibited problems on stability of conversion efficiency. These problems regarding a-Si:H films can be solved by replacing a-Si:H with microcrystalline silicon (/spl mu/c-Si) film. The goal of our research is to determine the best process conditions for the growth of /spl mu/c-Si on a plastic substrate. The films of /spl mu/c-Si with thickness in the range 20-120 nm were deposited in inductive coupled plasma chemical vapor deposition (ICP-CVD) system from mixture of diluted silane (SiH/sub 4/ 20% in He) and H/sub 2/ at low temperature of 100/spl deg/ Polycarbonate (PC) substrate (1mm thickness) 50/spl times/ 50 mm/sup 2/ was used as substrate. PC substrate has a higher heat resist of 130/spl deg/ than other plastic substrate and no problem to the alkali liquid. To verify the growth of /spl mu/c-Si film using an ICP-CVD, we investigated crystalline seeding layer on the plastic substrate and the optimized growth parameters of ICP. They were ultrasonically cleaned in methanol, D I water rinsed, and nitrogen-gas blown dry. The investigated process parameters for the Si film growth include plasma ignition conditions, rf power, input gas ratio, process pressure, with or without carrier gas An atomic force microscope (AFM) was employed for the surface morphology study and growth mechanism. An argon laser drive-Raman spectroscopy (Jobin Yvon /T64000, power=400 mW) was employed to determine the degree of crystallization and crystallized volume fraction of the /spl mu/c-Si film. |
| Sponsorship | Plasma Sci. & Applications Committee of the IEEE Nucl. & Plasma Sci. Soc. Hanyang Univ. Japan Soc. Plasma Res. Assoc. Korea Atomic Energy Res. Inst. Korea Basic Sci. Inst. Korea Vacuum Soc |
| File Size | 74509 |
| File Format | |
| ISBN | 078037911X |
| ISSN | 07309244 |
| DOI | 10.1109/PLASMA.2003.1229992 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-05 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Substrates Thin film transistors Semiconductor films Plasma temperature Crystallization Plastic films Thin film sensors Photovoltaic cells Surface resistance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
National Digital Library of India (NDLI) is a virtual repository of learning resources which is not just a repository with search/browse facilities but provides a host of services for the learner community. It is sponsored and mentored by Ministry of Education, Government of India, through its National Mission on Education through Information and Communication Technology (NMEICT). Filtered and federated searching is employed to facilitate focused searching so that learners can find the right resource with least effort and in minimum time. NDLI provides user group-specific services such as Examination Preparatory for School and College students and job aspirants. Services for Researchers and general learners are also provided. NDLI is designed to hold content of any language and provides interface support for 10 most widely used Indian languages. It is built to provide support for all academic levels including researchers and life-long learners, all disciplines, all popular forms of access devices and differently-abled learners. It is designed to enable people to learn and prepare from best practices from all over the world and to facilitate researchers to perform inter-linked exploration from multiple sources. It is developed, operated and maintained from Indian Institute of Technology Kharagpur.
Learn more about this project from here.
NDLI is a conglomeration of freely available or institutionally contributed or donated or publisher managed contents. Almost all these contents are hosted and accessed from respective sources. The responsibility for authenticity, relevance, completeness, accuracy, reliability and suitability of these contents rests with the respective organization and NDLI has no responsibility or liability for these. Every effort is made to keep the NDLI portal up and running smoothly unless there are some unavoidable technical issues.
Ministry of Education, through its National Mission on Education through Information and Communication Technology (NMEICT), has sponsored and funded the National Digital Library of India (NDLI) project.
| Sl. | Authority | Responsibilities | Communication Details |
|---|---|---|---|
| 1 | Ministry of Education (GoI), Department of Higher Education |
Sanctioning Authority | https://www.education.gov.in/ict-initiatives |
| 2 | Indian Institute of Technology Kharagpur | Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project | https://www.iitkgp.ac.in |
| 3 | National Digital Library of India Office, Indian Institute of Technology Kharagpur | The administrative and infrastructural headquarters of the project | Dr. B. Sutradhar bsutra@ndl.gov.in |
| 4 | Project PI / Joint PI | Principal Investigator and Joint Principal Investigators of the project |
Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon |
| 5 | Website/Portal (Helpdesk) | Queries regarding NDLI and its services | support@ndl.gov.in |
| 6 | Contents and Copyright Issues | Queries related to content curation and copyright issues | content@ndl.gov.in |
| 7 | National Digital Library of India Club (NDLI Club) | Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach | clubsupport@ndl.gov.in |
| 8 | Digital Preservation Centre (DPC) | Assistance with digitizing and archiving copyright-free printed books | dpc@ndl.gov.in |
| 9 | IDR Setup or Support | Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops | idr@ndl.gov.in |
|
Loading...
|