NDLI: New models for interconnect failure in advanced IC technology

Content Provider	IEEE Xplore Digital Library
Author	Lloyd, J.R.
Copyright Year	2008
Description	Author affiliation: IBM T.J. Watson Res. Center, Yorktown Heights, NY (Lloyd, J.R.)
Abstract	The two major interconnect failure modes most commonly considered in IC technology are electromigration (EM) and time dependent dielectric breakdown (TDDB) in interlevel dielectrics. In order to evaluate reliability, tests must be performed under conditions that are much more severe than those expected under normal use in order to obtain failure statistics in reasonable times. These tests only make sense if the extrapolated lifetimes and failure distributions can be extrapolated back to use conditions, so that assessments of the reliability under normal operation can be made. The simple use of the traditional Blackpsilas Law for EM and either the E or 1/E model for TDDB can be shown not to provide accurate projections of product lifetime in the light of recent knowledge of the failure mechanisms. In this paper, the most recently developed techniques for extrapolating test data to use conditions will be described with suggestions for determining operational reliability performance.
Starting Page	1
Ending Page	7
File Size	215689
Page Count	7
File Format	PDF
ISBN	9781424420391
DOI	10.1109/IPFA.2008.4588207
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-07-07
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Electromigration Copper Dielectrics Current density Metals Delamination
Content Type	Text
Resource Type	Article

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