NDLI: GaAs/Si solar cells with internal Bragg reflector superlattice structure

Content Provider	IEEE Xplore Digital Library
Author	Shimizu, Y. Okada, Y.
Copyright Year	2003
Description	Author affiliation: Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan (Shimizu, Y.; Okada, Y.)
Abstract	The characterization of thin film GaAs/Si solar cells grown by low-temperature molecular beam epitaxy (MBE) is presented. With assistance of atomic hydrogen irradiation in MBE, a clear streak RHEED pattern and sharp PL spectra with FWHM of less than 10 meV at 77 K were obtained. It was found that GaAs/Si layers grown at low temperatures were strained, and were gradually relaxed with increasing layer thickness. Bragg reflector superlattice structure was introduced into GaAs/Si solar cells. A remarkable improvement of spectral response was observed in the bandedge region of 790 nm /spl sim/ 840 nm, which is often degraded in a typical GaAs/Si solar cell. Suppression of threading dislocations owing to both lattice mismatch and thermal expansion coefficient difference was observed, as a result of insert ion BR superlattice structures and low-temperature growth.
Starting Page	781
Ending Page	784
File Size	275649
Page Count	4
File Format	PDF
ISBN	4990181603
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	PVSEC Advisory Committee
Subject Keyword	Gallium arsenide Photovoltaic cells Superlattices Molecular beam epitaxial growth Semiconductor thin films Atomic layer deposition Hydrogen Temperature Thermal degradation Lattices
Content Type	Text
Resource Type	Article

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