NDLI: The recombination and tunnel current in GaAs-based solar cells: effect of radiation

Content Provider	IEEE Xplore Digital Library
Author	Kalinovsky, V.S. Andreev, V.M. Evstropov, V.V. Khvostikov, V.P. Lantratov, V.M.
Copyright Year	2003
Description	Author affiliation: Ioffe Physico-Tech. Inst., Russia (Kalinovsky, V.S.; Andreev, V.M.; Evstropov, V.V.; Khvostikov, V.P.; Lantratov, V.M.)
Abstract	The space charge (depletion) region of photovoltaic and tunnel p-n junctions, as appeared, give an essential contribution to the characteristics of multi-cascade solar cells and to their radiation tolerance. In the present work the mechanisms of current passage in GaAs p-n junctions and their evolution under irradiation with 6.78 MeV protons, 1 MeV electrons and gamma-rays from a Co/sup 60/ source have been studied. The recombination component of the photovoltaic p/sup +/-n junctions yields the carrier lifetimes in the SCR /spl tau//sub w/ = (10/sup -10//spl divide/10/sup -8/)s. Estimates of the damage coefficient in the SCR - K/sub /spl tau/w/ based on an analysis of the dependence of the carrier lifetime in the SCR on the irradiation fluences demonstrated that the damage coefficient is fluence dependent.
Starting Page	765
Ending Page	768
File Size	264726
Page Count	4
File Format	PDF
ISBN	4990181603
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	PVSEC Advisory Committee
Subject Keyword	Photovoltaic cells Thyristors Photovoltaic systems Solar power generation P-n junctions Charge carrier lifetime Space charge Gallium arsenide Protons Electrons
Content Type	Text
Resource Type	Article

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