NDLI: Microstructural analyses of Ag thick-film contacts on n-type silicon emitters

Content Provider	IEEE Xplore Digital Library
Author	Huljic, D.M. Ballif, C. Hessler-Wyser, A. Willeke, G.
Copyright Year	2003
Description	Author affiliation: Fraunhofer Inst. for Solar Energy Syst. (ISE), Freiburg, Germany (Huljic, D.M.)
Abstract	The microstructural properties of Ag thick-film contacts on P diffused [100] Si wafers are investigated. By transmission electron microscopy, the contact interface is found to be composed of mostly 100-500 nm sized Ag crystallites penetrating into the Si on average up to 100 nm. The crystallites are mostly in epitaxial relation with Si, indicating their growth from the glass frit melt. A quasi continuous glassy layer is present between the crystallites and the Ag grains forming the contact bulk. Conductive atomic force microscopy on cross sections shows that the interface crystallites form a low contact resistivity with the Si emitter below 2/spl times/10/sup -7/ /spl Omega/cm/sup 2/. The measurements indicate selective current paths across the interface via few isolated Ag crystallites. In-plane atomic force microscopy on Si after contact removal confirms the statistical nature of the interface and an improved contact uniformity in case of firing through processes.
Starting Page	83
Ending Page	86
File Size	462004
Page Count	4
File Format	PDF
ISBN	4990181603
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	PVSEC Advisory Committee
Subject Keyword	Silicon Crystallization Atomic force microscopy Crystal microstructure Atomic measurements Transmission electron microscopy Glass Atomic layer deposition Conductivity Current measurement
Content Type	Text
Resource Type	Article

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