NDLI: Chemical and electronic properties of CdTe/Sb/sub 2/Te/sub 3//metal contacts for CdTe thin film solar cells studied by photoelectron spectroscopy

Content Provider	IEEE Xplore Digital Library
Author	Kraft, D. Spath, B. Thissen, A. Klein, A. Jaegermann, W.
Copyright Year	2003
Description	Author affiliation: Inst. of Mater. Sci., Darmstadt Univ. of Technol., Germany (Kraft, D.; Spath, B.; Thissen, A.; Klein, A.; Jaegermann, W.)
Abstract	Formation of low resistance back contacts in CdTe thin film solar cells has been a research issue for many years. Ohmic contacts to the absorber layer are typically prepared using the diffusion of dopant atoms from the back contact material into the CdTe forming a thin space charge layer that can easily be tunnelled. Stable CdTe solar cells with reasonable back contact characteristics have been prepared using metal/Sb/sub 2/Te/sub 3/ layer sequences. In this study the chemical and electronic properties of such layer systems have been investigated using photoelectron spectroscopy. The vacuum deposited Sb/sub 2/Te/sub 3/ layers do not react with the CdTe substrate. Band alignment does not indicate the formation of a good back contact. By subsequent deposition of metals a chemical reaction is induced forming metal-tellurides, a metal/Sb-alloy and elemental Sb. Although an Sb diffusion into the CdTe absorber is observed, no increase of p-doping in the surface region is evident.
Starting Page	450
Ending Page	453
File Size	301792
Page Count	4
File Format	PDF
ISBN	4990181603
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	PVSEC Advisory Committee
Subject Keyword	Chemicals Photovoltaic cells Tellurium Contact resistance Transistors Ohmic contacts Atomic layer deposition Space charge Spectroscopy Substrates
Content Type	Text
Resource Type	Article

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