NDLI: Gm-boosted balanced Colpitts compared to conventional balanced Colpitts and cross-coupled VCOs in InGaP HBT technology

Content Provider	IEEE Xplore Digital Library
Author	Szhau Lai Kuylenstierna, D. Angelov, I. Hansson, B. Kozhuharov, R. Zirath, H.
Copyright Year	2010
Description	Author affiliation: GigaHertz Centre, Microwave Electronics Laboratory, Chalmers University of Technology, SE-41296 Gothenburg, Sweden (Szhau Lai; Kuylenstierna, D.; Angelov, I.; Hansson, B.; Kozhuharov, R.; Zirath, H.)
Abstract	This paper presents a very compact $(800×600µm^{2})$ gm-boosted balanced Colpitts VCO in a customized InGaP HBT process. An excellent phase noise of −112 dBc/Hz@100kHz off-set and tuning range over 10% centers around 6GHz carrier is reached. To the authors best knowledge, this is the first ever gm-boosted balanced Colpitts in InGaP HBT. It is validated that the topology may provide enhanced performance compared to both conventional balanced Colpitts and cross-coupled topologies that are also evaluated in this work. The gm-boosted balanced Colpitts is found to be slightly better than the balanced Colpitts and significantly better than the cross-coupled topology. Particularly, the gm-boosted topology benefits from less variation in phase noise and output power over the tuning range. For all three circuits the phase noise is well predicted using an in-house large-signal noise HBT model. The intrinsic device wave-forms are verified with a large-signal vector network analyzer. It is found that the level of phase noise as well as the simulation accuracy is highly correlated to the wave-forms in the VCO.
Starting Page	386
Ending Page	389
File Size	978671
Page Count	4
File Format	PDF
ISBN	9781424475902
e-ISBN	9784902339215
e-ISBN	9781902339222
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-07
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	IEICE Institute of Electronics Informati
Subject Keyword	Phase noise Voltage-controlled oscillators Heterojunction bipolar transistors Topology Load modeling Integrated circuit modeling phase noise InGaP HBT compact device models large-signal modeling VCO
Content Type	Text
Resource Type	Article

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