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| Content Provider | IEEE Xplore Digital Library | 
|---|---|
| Author | Azuma, Y. Fujimoto, T. Kojima, I. Shinozaki, A. Morita, M. | 
| Copyright Year | 2002 | 
| Description | Author affiliation: Mater. Characterization Div., Agency of Ind. Sci. & Technol., Ibaraki, Japan (Azuma, Y.; Fujimoto, T.; Kojima, I.) | 
| Abstract | The development of the evaluation method for the thickness of ultrathin SiO/sub 2/ films on a Si substrate is a very important. SiO/sub 2/ is currently used as a gate dielectric material of a metal-oxide-semiconductor field effect transistors (MOSFET), and thicknesses of the film have been decreasing every year. In ITRS (International Technology Road Map for Semiconductors), it is required to measure the film thicknesses in the range of 1.8-0.6 nm with an uncertainty (3/spl sigma/) of /spl plusmn/ 4% in near feature. It is necessary for the accurate evaluation of a film thickness to estimate the various factors of the uncertainty. In this study, we focus on an effect of surface contaminations as one of the component of the uncertainties for thickness estimations. We propose an estimation method of the SiO/sub 2/ film thickness without surface contamination effect by using grazing incidence X-ray reflectivity (GIXRR) and X-ray photoelectron spectroscopy. | 
| Sponsorship | Japan Soc. Appl. Phys. IEEE Electron Device Soc | 
| File Size | 46461 | 
| File Format | |
| ISBN | 4891140313 | 
| DOI | 10.1109/IMNC.2002.1178641 | 
| Language | English | 
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Publisher Date | 2002-11-06 | 
| Publisher Place | Japan | 
| Access Restriction | Subscribed | 
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Subject Keyword | Uncertainty Surface contamination Semiconductor films Dielectric substrates Dielectric materials FETs MOSFET circuits Dielectric measurements Thickness measurement Pollution measurement | 
| Content Type | Text | 
| Resource Type | Article | 
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