NDLI: GaAs microcrystal growth and its position control by low energy focused ion beam

Content Provider	IEEE Xplore Digital Library
Author	Chikyow, T. Koguchi, N.
Copyright Year	2002
Description	Author affiliation: Nano Material Res. Labs., Nat. Inst. for Material Sci., Ibaraki, Japan (Chikyow, T.; Koguchi, N.)
Abstract	GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO/sub 2/ are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.
Sponsorship	Japan Soc. Appl. Phys. IEEE Electron Device Soc
Starting Page	218
Ending Page	219
File Size	98244
Page Count	2
File Format	PDF
ISBN	4891140313
DOI	10.1109/IMNC.2002.1178622
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-11-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Position control Ion beams Photonic crystals Crystalline materials Laboratories Materials science and technology Ultra large scale integration Signal design Optical interconnections
Content Type	Text
Resource Type	Article

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