NDLI: Energy migration governs upconversion losses in $Er^{3+}-doped$ integrated amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Agazzi, L. Bradley, J.D.B. Ay, F. Kahn, A. Scheife, H. Huber, G. de Ridder, R.M. Worhoff, K. Pollnau, M.
Copyright Year	2009
Description	Author affiliation: Institute of Laser-Physics, University of Hamburg, Luruper Chaussee 149, 22761, Germany (Kahn, A.; Scheife, H.; Huber, G.) \|\| Integrated Optical MicroSystems (IOMS) Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands (Agazzi, L.; Bradley, J.D.B.; Ay, F.; de Ridder, R.M.; Worhoff, K.; Pollnau, M.)
Abstract	Energy-transfer upconversion (ETU) is a detrimental effect in many rare-earth-ion-doped infrared amplifiers and lasers [1], among them $Er^{3+}-doped$ waveguide amplifiers [2]. $Er^{3+}$ concentrations in the order of $10^{20}$ $cm^{−3}$ are usually necessary to attain high gain values on the centimeter length scale of an integrated optical device. At such high $Er^{3+}$ doping, electric dipole-dipole interactions between neighboring ions such as energy migration and ETU take place, thereby reducing the population inversion and negatively affecting the gain performance of the amplifier. We investigated these effects by lifetime and gain measurements, see Figs. 1 (a) and (c), respectively, in $Al:Er^{3+}$ waveguides and analyzed the results in the frame of the microscopic model developed by Zubenko et al. [3]. The luminescent decay from the $^{4}I$ first excited level of $Er^{3+}$ can be described by the equation in a given equation is the error function, n(t = 0) = n(0) is the initial excitation density of the $^{4}I$ level, τD is its intrinsic lifetime, CDA is the microparameter of ETU from the $^{4}I$ level, and τ0 is the mean time of a migration hop. By fitting the experimental decay curves measured in samples with 7 different $Er^{3+}$ concentrations, out of which only 4 are shown in Fig. 1 (a) for simplicity, we find τD = 7.6 ms and CDA = $(6.1±0.6)×10^{−41}$ $cm^{6}/s,$ while τ0 decreases from 65 ms down to 1 ms with increasing $Er^{3+}$ concentration, see Fig. 1(b). This behavior is due to decreasing distance among $Er^{3+}$ ions with increasing concentration, which enhances the probability of the energy-migration process.
Starting Page	1
Ending Page	1
File Size	391550
Page Count	1
File Format	PDF
ISBN	9781424440795
DOI	10.1109/CLEOE-EQEC.2009.5196506
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-14
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical losses Integrated optics Stimulated emission Luminescence Performance gain Optical materials Optical amplifiers Erbium Optical waveguides Nanotechnology
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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