NDLI: High temperature physical modeling and verification of 4H-SiC lateral JFET device

Content Provider	IEEE Xplore Digital Library
Author	Xueqian Zhong Tao Wang Qing Guo Kuang Sheng
Copyright Year	2011
Description	Author affiliation: College of Electrical Engineering, Zhejiang University, Hangzhou, China (Xueqian Zhong; Tao Wang; Qing Guo; Kuang Sheng)
Abstract	Silicon Carbide (SiC) lateral JFET (LJFET) has drawn significant attentions due to its excellent performance in high-temperature and high-frequency electronics applications. This paper establishes a comprehensive physical model, including both DC and AC characteristics, for 4H-SiC lateral JFET at room temperature and high temperature (300°C). Finite element numerical simulation and experimental measurement are carried out to verify the validity of the established physical model. Good agreements have been achieved among these three sets of results. For the first time, the modeling work studied the detailed operating mechanism and provided valuable design guidelines for SiC LJFET device at temperature as high as 300°C.
Starting Page	4015
Ending Page	4018
File Size	928071
Page Count	4
File Format	PDF
ISBN	9781457705359
e-ISBN	9781457705366
DOI	10.1109/AIMSEC.2011.6010044
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-08
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Silicon carbide Lateral juction field-effect transistor(LJFET) Doping Logic gates Physical modeling Capacitance Numerical models High temperature Junctions Silicon Carbide(SiC)
Content Type	Text
Resource Type	Article

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