NDLI: Non-metallurgical bonding technology with super-narrow gap for 3D stacked LSI

Content Provider	IEEE Xplore Digital Library
Author	Umemoto, M. Tanida, K. Tomita, Y. Takahashi, T. Takahashi, K.
Copyright Year	2002
Description	Author affiliation: Assoc. of Super-Adv. Electron. Technol. (ASET), Tsukuba Res. Center, Ibaraki, Japan (Umemoto, M.; Tanida, K.; Tomita, Y.; Takahashi, T.; Takahashi, K.)
Abstract	The chip-stacking technologies with the thin devices in hyperfine pitch realize both of the strong demands for the high-speed signal transmission and the high-density packaging. The results of the experiments on the non-metallurgical bonding and encapsulation with nonconductive particle paste (NCP) are introduced. It realizes void-free encapsulation of under 10-/spl mu/m-thick gap, small warpage of 50-/spl mu/m-thick chip, and ohmic contact of all of 1844 bumps in 20-/spl mu/m-pitch. Additionally, it is found the flatness of chip backside is achieved sufficient level for the thin chip stacking process with hyper fine pitch interconnection.
Starting Page	285
Ending Page	288
File Size	803380
Page Count	4
File Format	PDF
ISBN	0780374355
DOI	10.1109/EPTC.2002.1185684
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-10
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bonding Large scale integration Encapsulation Gold Stacking Electronics packaging Ohmic contacts Wiring Copper Electrodes
Content Type	Text
Resource Type	Article

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Non-metallurgical bonding technology with super-narrow gap for 3D stacked LSI