NDLI: Interface trap induced thermionic and field emission current in off-state MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Tahui Wang Tse-En Chang Chimoon Huang
Copyright Year	1994
Description	Author affiliation: Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Tahui Wang; Tse-En Chang)
Abstract	An interface trap-assisted tunneling and thermionic emission model has been developed to study an increased drain leakage current in off-state MOSFET's after hot carrier stress. In the model, a complete band-trap-band leakage path is formed at the Si-SiO/sub 2/ interface by hole emission from interface traps to the valence band and electron emission from interface traps to the conduction band. Both hole and electron emissions are carried out via quantum tunneling or thermal excitation. In experiment, a 0.5 /spl mu/m n-MOSFET was subject to hot carrier stress to generate interface traps. The drain leakage current was characterized to compare with the model. Our study reveals that the interface trap-assisted two-step tunneling, hole tunneling followed by electron tunneling, is responsible for the leakage current at a large drain-to-gate bias (V/sub dg/) The lateral field plays a dominant role in the two-step tunneling process. As V/sub dg/ decreases, a thermionic-field emission mechanism, hole thermionic emission and electron tunneling, becomes a primary leakage path. At a sufficiently low V/sub dg/, our model reduces to the Shockley-Read-Hall theory and thermal generation of electron hole pairs through traps is dominant.<>
Starting Page	161
Ending Page	164
File Size	326969
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383440
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermionic emission MOSFET circuits Tunneling Electron traps Charge carrier processes Leakage current Electron emission Hot carriers Thermal stresses Thermal conductivity
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Interface trap induced drain leakage current in various n-MOSFET structures

Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's

Structural effect on band-trap-band tunneling induced drain leakage in n-MOSFET's

Interface trap effect on gate induced drain leakage current in submicron N-MOSFET's

Lateral field enhanced band-trap-band tunneling current in a 0.5 /spl mu/m "off" state mosfet

Lateral field enhanced band-trap-band tunneling current in a 0.5/spl mu/m "OFF" state MOSFET

Oxide-trap-induced instability of GIDL of thermally nitrided-oxide N-MOSFET's under stress

Mechanism of hot carrier induced degradation in MOSFET's

Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's

Interface trap induced thermionic and field emission current in off-state MOSFET's

Similar Documents

Interface trap induced drain leakage current in various n-MOSFET structures

Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's

Structural effect on band-trap-band tunneling induced drain leakage in n-MOSFET's

Interface trap effect on gate induced drain leakage current in submicron N-MOSFET's

Lateral field enhanced band-trap-band tunneling current in a 0.5 /spl mu/m "off" state mosfet

Lateral field enhanced band-trap-band tunneling current in a 0.5/spl mu/m "OFF" state MOSFET

Oxide-trap-induced instability of GIDL of thermally nitrided-oxide N-MOSFET's under stress

Mechanism of hot carrier induced degradation in MOSFET's

Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's

Interface trap induced thermionic and field emission current in off-state MOSFET's