NDLI: Ta/sub 2/O/sub 5/ capacitors for 1 Gbit DRAM and beyond

Content Provider	IEEE Xplore Digital Library
Author	Kwon, K.W. Park, I.-S. Han, D.H. Kim, E.S. Ahn, S.T. Lee, M.Y.
Copyright Year	1994
Description	Author affiliation: Semiconductor R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea (Kwon, K.W.; Park, I.-S.; Han, D.H.; Kim, E.S.; Ahn, S.T.; Lee, M.Y.)
Abstract	A thermally robust Ta/sub 2/O/sub 5/ capacitor applicable to the 1 Gbit DRAM and beyond was developed. From the degradation-free Ta/sub 2/O/sub 5/ capacitor with a TiN/poly-Si top electrode, the sputtered-TiN was replaced by the PECVD-WN to improve the step coverage for the complicated capacitor structure. The Ta/sub 2/O/sub 5/ capacitor with a PECVD-WN/poly-Si top electrode had a better thermal stability in the complicated capacitor structure than that with sputtered-TiN/poly-Si, as a result. Capacitance of more than 90 fF/cell and leakage current lower than 2/spl times/10/sup -15/ A/cell were obtained by applying the WN/poly-Si top electrode and a 3.5 nm Ta/sub 2/O/sub 5/ capacitor dielectric to a cylindrical capacitor with rugged poly-Si surface (projection area=0.4 /spl mu/m/sup 2/). TDDB measurement predicted longer lifetime than 10 years at the device operating voltage. This new capacitor structure, therefore, surpasses the requirements for the 1 Gbit DRAM.<>
Starting Page	835
Ending Page	838
File Size	359226
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383295
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitors Electrodes Random access memory Robustness Thermal degradation Tin Thermal stability Capacitance Leakage current Dielectrics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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