NDLI: A relaxation time approach to model the non-quasi-static transient effects in MOSFETs

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A relaxation time approach to model the non-quasi-static transient effects in MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Mansun Chan Kelvin Hui Neff, R. Chenming Hu Ping Keung Ko
Copyright Year	1994
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA (Mansun Chan; Kelvin Hui; Neff, R.; Chenming Hu; Ping Keung Ko)
Abstract	A relaxation time approach is used to model the non quasi-static effect of MOS circuits in transient analysis. Unlike the existing quasi-static models, the new model takes care of the finite charging time of the channel to reach equilibrium instantaneous channel charge re-distribution, and velocity saturation, giving more realistic and accurate results. The model has been implemented in SPICE and the simulation time penalty is less than 50%.<>
Starting Page	169
Ending Page	172
File Size	355303
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383438
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Circuit simulation Transient analysis SPICE Power system transients Equivalent circuits Frequency domain analysis Kelvin Circuit optimization Cutoff frequency
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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