NDLI: Highly-efficient 6.6 W 12 GHz HJFET for power amplifier

Content Provider	IEEE Xplore Digital Library
Author	Matsunaga, K. Okamoto, Y. Kuzuhara, M.
Copyright Year	1994
Description	Author affiliation: Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan (Matsunaga, K.; Okamoto, Y.; Kuzuhara, M.)
Abstract	This paper describes successfully developed GaAs-based heterojunction FETs (HJFETs) for Ku-band power amplifier applications with a multi-watt output. The fabricated 0.45 /spl mu/m gate-length HJFET exhibited a maximum drain current of 550 mA/mm, a transconductance of 370 mS/mm, and a gate-to-drain breakdown voltage of 12 V. Power performance for a 1.05 mm gate periphery device demonstrated a maximum output power of 0.81 W with 13.4 dB linear gain and 60% power added efficiency (PAE) at 12 GHz with a drain bias voltage of 7 V. An 8.4 mm HJFET delivered a 5.6 W output power with 13 dB linear gain and 56% PAE at a drain bias of 7 V. At 8 V drain bias, it delivered 6.6 W output power with 12.5 dB linear gain and 50% PAE. These results show the best combination of PAE, gain and output power achieved by a single transistor at this frequency.<>
Starting Page	895
Ending Page	898
File Size	298873
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383269
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High power amplifiers Power generation Power amplifiers Heterojunctions FETs Transconductance Performance gain Breakdown voltage Sputter etching Thermal resistance
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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